1999. 5. 4 1/5 semiconductor technical data ktn2222s/as epitaxial planar npn transistor revision no : 2 general purpose application. switching application. features h low leakage current : i cex =10na(max.) ; v ce =60v, v eb(off) =3v. h low saturation voltage : v ce(sat) =0.3v(max.) ; i c =150ma, i b =15ma. h complementary to the ktn2907s/2907as. dim millimeters sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q 1. emitter 2. base 3. collector maximum rating (ta=25 ? ) characteristic symbol rating unit ktn2222s ktn2222as collector-base voltage v cbo 60 75 v collector-emitter voltage v ceo 30 40 v emitter-base voltage v ebo 5 6 v collector current i c 600 ma collector power dissipation (ta=25 ? ) p c 350 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? note : p c * : package mounted on 99.5% alumina 10 ? 8 ? 0.6mm. mark spec type name marking lot no. zb type name lot no. zg type mark ktn2222s z b ktn2222as z g
1999. 5. 4 2/5 ktn2222s/as revision no : 2 electrical characteristics (ta=25 ? ) * pulse test : pulse width " 300 s, duty cycle " 2%. characteristic symbol test condition min. typ. max. unit collector cut-off current ktn2222as i cex v ce =60v, v eb(off) =3v - - 10 na collector cut-off current ktn2222s i cbo v cb =50v, i e =0 - - 0.01 a ktn2222as v cb =60v, i e =0 - - 0.01 emitter cut-off current ktn2222as i ebo v eb =3v, i c =0 - - 10 na collector-base breakdown voltage ktn2222s v (br)cbo i c =10 a, i e =0 60 - - v ktn2222as 75 - - collector-emitter * breakdown voltage ktn2222s v (br)ceo i e =10ma, i b =0 30 - - v ktn2222as 40 - - emitter-base breakdown voltage ktn2222s v (br)ebo i e =10 a, i c =0 5 - - v ktn2222as 6 - - dc current gain * ktn2222s ktn2222as h fe (1) i c =0.1ma, v ce =10v 35 - - h fe (2) i c =1ma, v ce =10v 50 - - h fe (3) i c =10ma, v ce =10v 75 - - h fe (4) i c =150ma, v ce =10v 100 - 300 ktn2222s h fe (5) i c =500ma, v ce =10v 30 - - ktn2222as 40 - - collector-emitter * saturation voltage ktn2222s v ce(sat) 1 i c =150ma, i b =15ma - - 0.4 v ktn2222as - - 0.3 ktn2222s v ce(sat) 2 i c =500ma, i b =50ma - - 1.6 ktn2222as - - 1 base-emitter * saturation voltage ktn2222s v be(sat) 1 i c =150ma, i b =15ma - - 1.3 v ktn2222as 0.6 - 1.2 ktn2222s v be(sat) 2 i c =500ma, i b =50ma - - 2.6 ktn2222as - - 2.0 transition frequency ktn2222s f t v ce =20v, i c =20ma, f=100mhz 250 - - mhz ktn2222as 300 - - collector output capacitance c ob v cb =10v, i e =0, f=1.0mhz - - 8 pf input capacitance ktn2222s c ib v eb =0.5v, i c =0, f=1.0mhz - - 30 pf ktn2222as - - 25
1999. 5. 4 3/5 ktn2222s/as revision no : 2 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit input impedance ktn2222as h ie i c =1ma, v ce =10v, f=1khz 2 - 8 k ? i c =10ma, v ce =10v, f=1khz 0.25 - 1.25 voltage feedback ratio ktn2222as h re i c =1ma, v ce =10v, f=1khz - - 8 x10 -4 i c =10ma, v ce =10v, f=1khz - - 4 small-singal current gain ktn2222as h fe i c =1ma, v ce =10v, f=1khz 50 - 300 i c =10ma, v ce =10v, f=1khz 75 - 375 collector output admittance ktn2222as h oe i c =1ma, v ce =10v, f=1khz 5 - 35 i c =10ma, v ce =10v, f=1khz 25 - 200 collector-base time constant ktn2222as c c h rbb? i e =20ma, v cb =20v, f=31.8mhz - - 150 ps noise figure ktn2222as nf i c =100 a, v ce =10v, rg=1k ? , f=1khz - - 4 db switching time delay time t d v cc =30v, v be(off) =0.5v i c =150ma, i b1 =15ma - - 10 ns rise time t r - - 25 storage time t stg v cc =30v, i c =150ma i b1 =-i b2 =15ma - - 225 fall time t f - - 60 ?
1999. 5. 4 4/5 ktn2222s/as revision no : 2
1999. 5. 4 5/5 ktn2222s/as revision no : 2
|
